High‐Conductivity Stoichiometric Titanium Nitride for Bioelectronics

Bioelectronic devices such as neural stimulation and recording require stable low-impedance electrode interfaces. Various forms of nitridated titanium are used in biointerface applications due to robustness biological inertness. In this work, stoichiometric TiN thin films fabricated using a dual Kaufman ion-beam source setup, without the necessity substrate heating. These layers remarkable compared established high degree crystallinity excellent electrical conductivity. How fabrication method can be extended produce structured AlN, yield robust AlN/TiN bilayer micropyramids, is described. electrodes compare favorably commercial microelectrodes performance metrics important for bioelectronics interfaces: higher conductivity (by an order magnitude), lower electrochemical impedance, capacitive charge injection with faradaicity. results demonstrate that sputtering competitive nitride ceramics at low deposition temperatures.